Mohamed Atalla1957
Develops thermal silicon-dioxide passivation, enabling stable semiconductor surfaces for later MOS electronics.
United States of America · Science / Technology. Chronological records rendered directly from the World History Database.
Develops thermal silicon-dioxide passivation, enabling stable semiconductor surfaces for later MOS electronics.
This factsheet is generated from stored World History Database records matching the country, broad category, detailed category and exact Event value shown above. Duplicate display records are collapsed; database wording is otherwise preserved. Source provenance varies by record, so formal academic citation should be checked against the relevant primary source, archive or specialist historical reference.